发明公开
EP2312651A4 GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM
审中-公开
甘光半导体元件，其制造方法光学甘半导体元件，外延片和方法为建设GaN系半导体薄膜
- 专利标题： GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM
- 专利标题（中）： 甘光半导体元件，其制造方法光学甘半导体元件，外延片和方法为建设GaN系半导体薄膜
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申请号： EP09804942申请日： 2009-08-03
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公开(公告)号： EP2312651A4公开(公告)日： 2015-05-27
- 发明人: ENYA YOHEI , YOSHIZUMI YUSUKE , UENO MASAKI , AKITA KATSUSHI , KYONO TAKASHI , SUMITOMO TAKAMICHI , NAKAMURA TAKAO
- 申请人： SUMITOMO ELECTRIC INDUSTRIES
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES
- 优先权： JP2008201039 2008-08-04; JP2009094335 2009-04-08; JP2009155208 2009-06-30
- 主分类号： H01L33/32
- IPC分类号： H01L33/32 ; H01L21/02 ; H01L33/16 ; H01S5/343
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