发明公开
EP2343725A1 Terahertz radiation sources and methods of manufacturing the same
有权
Terahertz-Strahlungsquelle und Herstellungsverfahrendafür
- 专利标题： Terahertz radiation sources and methods of manufacturing the same
- 专利标题（中）： Terahertz-Strahlungsquelle und Herstellungsverfahrendafür
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申请号： EP10181822.7申请日： 2010-09-29
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公开(公告)号： EP2343725A1公开(公告)日： 2011-07-13
- 发明人: Baik, Chan-wook , Lee, Joo-ho , Son, Hyung-bin
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： 416 Maetan-dong Yeongtong-gu Suwon-si, Gyeonggi-do 442-742 KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： 416 Maetan-dong Yeongtong-gu Suwon-si, Gyeonggi-do 442-742 KR
- 代理机构： Greene, Simon Kenneth
- 优先权： KR20100002382 20100111
- 主分类号： H01J25/02
- IPC分类号： H01J25/02 ; H01J25/34
摘要：
A terahertz radiation source includes: a cathode configured to emit an electron beam, an anode configured to focus the electron beam emitted from the cathode; a collector facing the cathode and configured to collect the emitted electron beam focused by the anode; an oscillating circuit positioned between the anode and the collector and configured to convert energy of a passing electron beam into electromagnetic wave energy; and an output unit connected to the oscillating circuit and configured to externally emit the electromagnetic wave energy.
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