发明公开
- 专利标题： Method for depositing a semiconductor nanowire
- 专利标题（中）： 维尔法赫·祖尔·阿切斯登
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申请号： EP10195600.1申请日： 2001-08-22
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公开(公告)号： EP2360298A2公开(公告)日： 2011-08-24
- 发明人: Lieber, Charles , Cui, Ying , Duan, Xiangfeng , Huang, Yung-Sheng
- 申请人： President and Fellows of Harvard College
- 申请人地址： Office of Technology and Trademark Licensing, Suite 727, Holyoke Center, 1350 Massachusetts Avenue Cambridge, MA 02138 US
- 专利权人： President and Fellows of Harvard College
- 当前专利权人： President and Fellows of Harvard College
- 当前专利权人地址： Office of Technology and Trademark Licensing, Suite 727, Holyoke Center, 1350 Massachusetts Avenue Cambridge, MA 02138 US
- 代理机构： Piotrowicz, Pawel Jan Andrzej
- 优先权： US226835 20000822; US254745 20001211; US292121 20010518; US292035 20010518; US292045 20010518; US291896 20010518
- 主分类号： C30B29/60
- IPC分类号： C30B29/60 ; C30B7/00 ; H01L29/06 ; H01L21/02
摘要：
A method for depositing one or more semiconductor nanowires on a substrate, the method comprising providing a substrate and depositing the one or more semiconductor nanowires on the surface of the substrate.
公开/授权文献
- EP2360298A3 Method for depositing a semiconductor nanowire 公开/授权日：2011-10-05
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