An organic semiconductor material having excellent carrier (electron) mobility and stability and its film can be formed by simple production process, as well as an organic thin-film transistor in which the material is used in an organic semiconductor layer are disclosed.
An organic semiconductor material having the structure represented by the general formula (1) shown below:

wherein L represents a bivalent linker group having the structure consisting of one group or any combination of two or more groups selected from unsubstituted or substituted vinylene group, acetylene group, unsubstituted or substituted aromatic hydrocarbon residue, unsubstituted or substituted fused aromatic hydrocarbon residue, unsubstituted or substituted heteroaromatic residue, unsubstituted or substituted fused heteroaromatic residue;
R 1 represents carbonyl group, cyano group or C 1 -C 12 fluorinated alkyl group;
R 2 represents halogen atom, cyano group, carbonyl group or acetyl group.