发明公开
EP2428843A1 Photoresist compositions and methods of forming photolithographic patterns
审中-公开
光致抗蚀剂组合物和形成光刻图案的方法
- 专利标题： Photoresist compositions and methods of forming photolithographic patterns
- 专利标题（中）： 光致抗蚀剂组合物和形成光刻图案的方法
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申请号： EP11180515.6申请日： 2011-09-08
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公开(公告)号： EP2428843A1公开(公告)日： 2012-03-14
- 发明人: Bae, Young Cheol , Cardolaccia, Thomas , Sun, Jibin , Arriola, Daniel J. , Frazier, Kevin A.
- 申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
- 申请人地址： 455 Forest Street Marlborough, MA 01752 US
- 专利权人： Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- 当前专利权人： Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- 当前专利权人地址： 455 Forest Street Marlborough, MA 01752 US
- 代理机构： Buckley, Guy Julian
- 优先权： US381805P 20100910
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/20 ; G03F7/32
摘要：
Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
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