Invention Publication
EP2453482A1 MAGNETIZATION-REVERSING APPARATUS, MEMORY ELEMENT, AND MAGNETIC FIELD-GENERATING APPARATUS
审中-公开
MAGNETISIERUNGSUMKEHRUNGSVORRICHTUNG,SPEICHERELEMENT UND MAGNETFELDERZEUGUNGSVORRICHTUNG
- Patent Title: MAGNETIZATION-REVERSING APPARATUS, MEMORY ELEMENT, AND MAGNETIC FIELD-GENERATING APPARATUS
- Patent Title (中): MAGNETISIERUNGSUMKEHRUNGSVORRICHTUNG,SPEICHERELEMENT UND MAGNETFELDERZEUGUNGSVORRICHTUNG
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Application No.: EP10797202.8Application Date: 2010-07-09
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Publication No.: EP2453482A1Publication Date: 2012-05-16
- Inventor: KIMURA Takashi , HAMAYA Kohei
- Applicant: Kyushu University, National University Corporation
- Applicant Address: 10-1, Hakozaki 6-chome Higashi-ku Fukuoka-shi, Fukuoka 812-8581 JP
- Assignee: Kyushu University, National University Corporation
- Current Assignee: Kyushu University, National University Corporation
- Current Assignee Address: 10-1, Hakozaki 6-chome Higashi-ku Fukuoka-shi, Fukuoka 812-8581 JP
- Agency: Höhfeld, Jochen
- Priority: JP2009162768 20090709
- International Announcement: WO2011004891 20110113
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11B5/31 ; H01L21/8246 ; H01L27/105
Abstract:
A magnetization reversal device includes a ferromagnetic 12 body which is provided in an interconnection of a non-ferromagnetic dot 11 so that a part or a whole of the ferromagnetic dot is three-dimensionally buried in the interconnection of said non-ferromagnetic dot, and a spin injection source 13 which generates a spin-polarized pure spin current without a flow of charges, and which is provided in the interconnection of the non-ferromagnetic dot 11 to be in contact therewith so that the interconnection of the non-ferromagnetic dot serves as a common electrode, and the pure spin current flows into the ferromagnetic dot 2 through the interconnection of the non-magnetic body by the spin injection source 13 due to a diffusion current, to thereby reverse magnetization of the ferromagnetic dot 12. By injecting the pure spin current, using this planar structure, it is possible to easily carry out the magnetization reversal of the ferromagnetic dot 12 even if it is a thick film ferromagnetic dot without being subjected to limitation of a spin diffusion length.
Information query
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