发明公开
EP2454751A1 HIGH-GAIN WIDE BANDGAP DARLINGTON TRANSISTORS AND RELATED METHODS OF FABRICATION
审中-公开
高增益宽带隙和相关方法达林顿晶体管
- 专利标题： HIGH-GAIN WIDE BANDGAP DARLINGTON TRANSISTORS AND RELATED METHODS OF FABRICATION
- 专利标题（中）： 高增益宽带隙和相关方法达林顿晶体管
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申请号： EP10742052.3申请日： 2010-07-15
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公开(公告)号： EP2454751A1公开(公告)日： 2012-05-23
- 发明人: ZHANG, Qingchun , AGARWAL, Anant K.
- 申请人： Cree, Inc.
- 申请人地址： 4600 Silicon Drive Durham, NC 27703 US
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： 4600 Silicon Drive Durham, NC 27703 US
- 代理机构： Cross, Rupert Edward Blount
- 优先权： US503386 20090715
- 国际公布： WO2011008919 20110120
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L27/082 ; H01L29/73
摘要：
A packaged power electronic device includes a wide bandgap bipolar driver transistor having a base, a collector, and an emitter terminal, and a wide bandgap bipolar output transistor having a base, a collector, and an emitter terminal. The collector terminal of the output transistor is coupled to the collector terminal of the driver transistor, and the base terminal of the output transistor is coupled to the emitter terminal of the driver transistor to provide a Darlington pair. An area of the output transistor is at least 3 times greater than an area of the driver transistor in plan view. For example, an area ratio of the output transistor to the driver transistor may be between about 3:1 to about 5:1. Related devices and methods of fabrication are also discussed.
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