发明公开
- 专利标题: MULTI-STAGE IMPEDANCE MATCHING
- 专利标题(中): 多级阻抗匹配
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申请号: EP10743295.7申请日: 2010-08-03
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公开(公告)号: EP2462693A1公开(公告)日: 2012-06-13
- 发明人: NEJATI, Babak , ZHAO, Yu , PLETCHER, Nathan M. , HADJICHRISTOS, Aristotele , SEE, Puay Hoe
- 申请人: Qualcomm Incorporated
- 申请人地址: Attn: International IP Administration 5775 Morehouse Drive San Diego, CA 92121 US
- 专利权人: Qualcomm Incorporated
- 当前专利权人: Qualcomm Incorporated
- 当前专利权人地址: Attn: International IP Administration 5775 Morehouse Drive San Diego, CA 92121 US
- 代理机构: Reedy, Orlaith
- 优先权: US230976P 20090803; US231242P 20090804; US641228 20091217
- 国际公布: WO2011017368 20110210
- 主分类号: H03F1/56
- IPC分类号: H03F1/56 ; H03F3/72
摘要:
Exemplary techniques for performing impedance matching are described. In an exemplary embodiment, the apparatus may include an amplifier (e.g., a power amplifier) coupled to first and second matching circuits. The first matching circuit may include multiple stages coupled to a first node and may provide input impedance matching for the amplifier. The second matching circuit may include multiple stages coupled to a second node and may provide output impedance matching for the amplifier. At least one switch may be coupled between the first and second nodes and may bypass or select the amplifier. The first and second nodes may have a common impedance. The apparatus may further include a second amplifier coupled in parallel with the amplifier and further to the matching circuits. The second matching circuit may include a first input stage coupled to the amplifier, a second input stage coupled to the second amplifier, and a second stage coupled to the two input stages via switches.
公开/授权文献
- EP2462693B1 MULTI-STAGE IMPEDANCE MATCHING 公开/授权日:2019-02-20
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