发明公开
- 专利标题： FIN-TYPE DEVICE SYSTEM AND METHOD
- 专利标题（中）： RIPPENARTIGE VORRICHTUNG，SYSTEM UND VERFAHREN
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申请号： EP10760154.4申请日： 2010-09-01
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公开(公告)号： EP2474038A1公开(公告)日： 2012-07-11
- 发明人: SONG, Seung-Chul , ABU-RAHMA, Mohamed, Hassan , HAN, Beom-Mo
- 申请人： Qualcomm Incorporated
- 申请人地址： Attn: International IP Administration 5775 Morehouse Drive San Diego, CA 92121 US
- 专利权人： Qualcomm Incorporated
- 当前专利权人： Qualcomm Incorporated
- 当前专利权人地址： Attn: International IP Administration 5775 Morehouse Drive San Diego, CA 92121 US
- 代理机构： Dunlop, Hugh Christopher
- 优先权： US552359 20090902
- 国际公布： WO2011028796 20110310
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A method includes forming a gate of a transistor within a substrate having a surface and forming a buried oxide (BOX) layer within the substrate and adjacent to the gate at a first BOX layer face. The method also includes forming a raised source-drain channel (“fin”), where at least a portion of the fin extends from the surface of the substrate, and where the fin has a first fin face adjacent a second BOX layer face of the BOX layer.
公开/授权文献
- EP2474038B1 FIN-TYPE DEVICE SYSTEM AND METHOD 公开/授权日：2024-08-28
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