发明公开
- 专利标题： WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DIODE
- 专利标题（中）： 发光二极管的波长变换SEMICONDUCTORS
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申请号： EP10779854.8申请日： 2010-10-22
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公开(公告)号： EP2504870A1公开(公告)日： 2012-10-03
- 发明人: SIMONIAN, Dmitri , BASIN, Grigoriy
- 申请人： Koninklijke Philips Electronics N.V. , Philips Lumileds Lighting Company LLC
- 申请人地址： Groenewoudseweg 1 5621 BA Eindhoven NL
- 专利权人： Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company LLC
- 当前专利权人： Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company LLC
- 当前专利权人地址： Groenewoudseweg 1 5621 BA Eindhoven NL
- 代理机构： Van Eeuwijk, Alexander Henricus Waltherus
- 优先权： US624156 20091123
- 国际公布： WO2011061650 20110526
- 主分类号： H01L33/50
- IPC分类号： H01L33/50 ; H01L33/64 ; H01L33/56
摘要：
A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material is positioned in a path of light emitted by the light emitting layer. A thermal coupling material is disposed in a transparent material. The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material.
公开/授权文献
- EP2504870B1 WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DIODE 公开/授权日：2019-08-14
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