发明授权
- 专利标题: ELECTRON MICROSCOPE
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申请号: EP10835635.3申请日: 2010-10-25
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公开(公告)号: EP2511937B1公开(公告)日: 2018-04-11
- 发明人: KAJI, Kazutoshi
- 申请人: Hitachi High-Technologies Corporation
- 申请人地址: 24-14, Nishi Shimbashi 1-chome Minato-ku, Tokyo 105-8717 JP
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: 24-14, Nishi Shimbashi 1-chome Minato-ku, Tokyo 105-8717 JP
- 代理机构: Strehl Schübel-Hopf & Partner
- 优先权: JP2009278105 20091208
- 国际公布: WO2011070704 20110616
- 主分类号: H01J37/244
- IPC分类号: H01J37/244 ; G01N23/225 ; H01J37/22 ; H01J37/24 ; H01J37/28 ; G01N23/04 ; H01J37/26
摘要:
An object of the present invention relates to measurement of a quantitative element image with a high S/N ratio and measurement of an electron energy loss spectrum with high energy precision and energy resolution. The present invention relates to measurement of a characteristic X-ray spectrum obtained by correcting dead time due to excessive X rays and measurement of an electron energy loss spectrum obtained by correcting energy based on a zero loss peak in the case where the characteristic X-ray spectrum and the electron energy loss spectrum are measured by irradiating one irradiation position on a sample with an electron beam for a predetermined time while scanning the surface of the sample to observe a Z-contrast image. According to the present invention, it becomes possible to measure a quantitative element image with a high S/N ratio by a characteristic X ray, an element image with a high S/N ratio by an electron energy loss spectrum and a high energy resolution spectrum.
公开/授权文献
- EP2511937A1 ELECTRON MICROSCOPE 公开/授权日:2012-10-17
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