发明公开
EP2520690A1 RUTHENIUM COMPLEX MIXTURE, METHOD FOR PRODUCING SAME, COMPOSITION FOR FORMING FILM, RUTHENIUM-CONTAINING FILM AND METHOD FOR PRODUCING SAME
有权
RUTHENIUMKOMPLEXMISCHUNG，HERSTELLUNGSVERFAHRENDAFÜR，FILMBILDENDE ZUSAMMENSETZUNG，RENHENIUMHALTIGER FILM UND HERSTELLUNGSVERFAHRENDAFÜR
- 专利标题： RUTHENIUM COMPLEX MIXTURE, METHOD FOR PRODUCING SAME, COMPOSITION FOR FORMING FILM, RUTHENIUM-CONTAINING FILM AND METHOD FOR PRODUCING SAME
- 专利标题（中）： RUTHENIUMKOMPLEXMISCHUNG，HERSTELLUNGSVERFAHRENDAFÜR，FILMBILDENDE ZUSAMMENSETZUNG，RENHENIUMHALTIGER FILM UND HERSTELLUNGSVERFAHRENDAFÜR
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申请号： EP10840837.8申请日： 2010-11-29
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公开(公告)号： EP2520690A1公开(公告)日： 2012-11-07
- 发明人: MANIWA, Atsushi , OSHIMA, Noriaki , KAWANO, Kazuhisa , FURUKAWA, Taishi , CHIBA, Hirokazu , YAMAMOTO, Toshiki
- 申请人： Tosoh Corporation
- 申请人地址： 4560 Kaisei-cho Shunan-shi Yamaguchi 746-8501 JP
- 专利权人： Tosoh Corporation
- 当前专利权人： Tosoh Corporation
- 当前专利权人地址： 4560 Kaisei-cho Shunan-shi Yamaguchi 746-8501 JP
- 代理机构： Müller-Boré & Partner Patentanwälte
- 优先权： JP2010178697 20100809; JP2009297196 20091228
- 国际公布： WO2011080978 20110707
- 主分类号： C23C16/18
- IPC分类号： C23C16/18 ; H01L21/28 ; H01L21/285 ; C07F15/00
摘要：
For forming a thin ruthenium film of good quality by CVD method, it is necessary to form the thin film at low temperature. There hence is a desire for a ruthenium compound having a high reactivity to heat. This invention relates to a method of producing a ruthenium-containing film by CVD or the like using, as a raw material, a ruthenium complex mixture containing (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium and bis(2,4-dimethylpentadienyl)ruthenium, the amount of the latter compound being 0.1 to 100% by weight based on the weight of (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium, and the like.
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