发明公开
- 专利标题： Recessed gate field effect transistor
- 专利标题（中）： 场效应晶体管具有凹陷栅极
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申请号： EP12171809.2申请日： 2012-06-13
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公开(公告)号： EP2535938A3公开(公告)日： 2013-02-20
- 发明人: Clevenger, Lawrence A. , Radens, Carl , Xu, Yiheng , Zhang, John H.
- 申请人： STMicroelectronics Inc , International Business Machines Corporation
- 申请人地址： 750 Canyon Drive, Suite 300 Coppell, TX 75019 US
- 专利权人： STMicroelectronics Inc,International Business Machines Corporation
- 当前专利权人： STMicroelectronics Inc,International Business Machines Corporation
- 当前专利权人地址： 750 Canyon Drive, Suite 300 Coppell, TX 75019 US
- 代理机构： Style, Kelda Camilla Karen
- 优先权： US201161496524P 20110613; US201161497052P 20110614; US201213494965 20120612
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A semiconductor device having a gate positioned in a recess between the source region and a drain region that are adjacent either side of the gate electrode. A channel region is below a majority of the source region as well as a majority of the drain region and the entire gate electrode.
公开/授权文献
- EP2535938A2 Recessed gate field effect transistor 公开/授权日：2012-12-19
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