发明公开
EP2544219A1 SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND DEVICE PRODUCTION METHOD
审中-公开
WITH A多层膜晶体衬底，METHOD FOR WITH多层膜和器件POSITION RATHER PROCEDURE晶体衬底
- 专利标题： SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND DEVICE PRODUCTION METHOD
- 专利标题（中）： WITH A多层膜晶体衬底，METHOD FOR WITH多层膜和器件POSITION RATHER PROCEDURE晶体衬底
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申请号： EP11750812.7申请日： 2011-03-04
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公开(公告)号： EP2544219A1公开(公告)日： 2013-01-09
- 发明人: AIDA, Hideo , AOTA, Natsuko , HOSHINO, Hitoshi , FURUTA, Kenji , HAMAMOTO, Tomosaburo , HONJO, Keiji
- 申请人： Namiki Seimitsu Houseki kabushikikaisha , Disco Corporation
- 申请人地址： 8-22, Shinden 3-chome Adachi-ku Tokyo 123-8511 JP
- 专利权人： Namiki Seimitsu Houseki kabushikikaisha,Disco Corporation
- 当前专利权人： Namiki Seimitsu Houseki kabushikikaisha,Disco Corporation
- 当前专利权人地址： 8-22, Shinden 3-chome Adachi-ku Tokyo 123-8511 JP
- 代理机构： Skone James, Robert Edmund
- 优先权： JP2010049858 20100305
- 国际公布： WO2011108703 20110909
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; C30B29/20 ; C30B33/02 ; H01L21/268
摘要：
In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate (20); a multilayer film (30) including two or more layers that is formed on one surface of the single crystal substrate (20) and having a compressive stress; and a heat-denatured layer (22) provided, of two regions (20U, 20D) obtained by bisecting the single crystal substrate (20) in the thickness direction thereof, at least in the region (20D) on the side of the surface opposite to the one surface of the single crystal substrate (20) having the multilayer film (30) formed thereon.
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