发明公开
EP2570523A1 METHOD FOR PRODUCING GALLIUM TRICHLORIDE GAS AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL
有权
生产三氯化镓气体的方法和生产氮化物半导体晶体的方法
- 专利标题： METHOD FOR PRODUCING GALLIUM TRICHLORIDE GAS AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR CRYSTAL
- 专利标题（中）： 生产三氯化镓气体的方法和生产氮化物半导体晶体的方法
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申请号： EP11780659.6申请日： 2011-05-11
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公开(公告)号： EP2570523A1公开(公告)日： 2013-03-20
- 发明人: KOUKITU, Akinori , KUMAGAI, Yoshinao
- 申请人： National University Corporation Tokyo University Of Agriculture and Technology
- 申请人地址： 3-8-1 Harumi-cho Fuchu-shi Tokyo 183-8538 JP
- 专利权人： National University Corporation Tokyo University Of Agriculture and Technology
- 当前专利权人： National University Corporation Tokyo University Of Agriculture and Technology
- 当前专利权人地址： 3-8-1 Harumi-cho Fuchu-shi Tokyo 183-8538 JP
- 代理机构： Brookes Batchellor LLP
- 优先权： JP2010110064 20100512
- 国际公布： WO2011142402 20111117
- 主分类号： C30B29/38
- IPC分类号： C30B29/38 ; C23C16/34 ; C30B25/14 ; H01L21/205
摘要：
According to the invention, there is provided a method for producing a gallium trichloride gas, the method including: a first step of reacting a metallic gallium and a chlorine gas to produce a gallium monochloride gas; and a second step of reacting the produced gallium monochloride gas and a chlorine gas to produce a gallium trichloride gas.
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