发明公开
EP2579025A1 NEAR FIELD-ENHANCED FLUORESCENCE SENSOR CHIP
有权
NAHFELDVERSTÄRKTERFLUORESZENZ-SENSORCHIP
- 专利标题: NEAR FIELD-ENHANCED FLUORESCENCE SENSOR CHIP
- 专利标题(中): NAHFELDVERSTÄRKTERFLUORESZENZ-SENSORCHIP
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申请号: EP11792392.0申请日: 2011-06-06
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公开(公告)号: EP2579025A1公开(公告)日: 2013-04-10
- 发明人: KAYA, Takatoshi , HIKAGE, Naoki , NINOMIYA, Hidetaka
- 申请人: Konica Minolta Holdings, Inc.
- 申请人地址: 2-7-2, Marunouchi Chiyoda-ku Tokyo 100-7015 JP
- 专利权人: Konica Minolta Holdings, Inc.
- 当前专利权人: Konica Minolta Holdings, Inc.
- 当前专利权人地址: 2-7-2, Marunouchi Chiyoda-ku Tokyo 100-7015 JP
- 代理机构: Gille Hrabal
- 优先权: JP2010129943 20100607
- 国际公布: WO2011155435 20111215
- 主分类号: G01N21/64
- IPC分类号: G01N21/64 ; G01N33/543
摘要:
Disclosed is an SPFS sensor chip by which an antigen-antibody reaction or fluorescence can be detected at the maximum efficiency. The SPFS sensor chip, which comprises a transparent substrate, a metal film, an SAM, a solid phase layer having a three-dimensional structure and a ligand, is characterized in that, in said sensor chip, the fluctuation rate represented by the following formula is 0-30% inclusive: [half-width (α)-half width (ss)]/half width (ss)100 [wherein half-width (α) is obtained from a graph that its drawn by plotting the intensity of reflected light of light entering at a definite angle from one surface of sold transparent substrate, said surface not being in contact with the metal film and said reflected light intensity being measured with a light intensity detector placed on the opposite surface side of the transparent substrate, against the angle; and half width (ss) represents the half width of the sensor chip comprising the transparent substrate and the metal film].
公开/授权文献
- EP2579025B1 NEAR FIELD-ENHANCED FLUORESCENCE SENSOR CHIP 公开/授权日:2016-09-28
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