发明公开
EP2581464A1 AUSTENITIC STAINLESS STEEL TUBE HAVING EXCELLENT STEAM OXIDATION RESISTANCE, AND METHOD FOR PRODUCING SAME
审中-公开
具有优异的耐蒸气氧化性的奥氏体不锈钢管及其制造方法
- 专利标题: AUSTENITIC STAINLESS STEEL TUBE HAVING EXCELLENT STEAM OXIDATION RESISTANCE, AND METHOD FOR PRODUCING SAME
- 专利标题(中): 具有优异的耐蒸气氧化性的奥氏体不锈钢管及其制造方法
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申请号: EP11792254.2申请日: 2011-05-19
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公开(公告)号: EP2581464A1公开(公告)日: 2013-04-17
- 发明人: NISHIYAMA, Yoshitaka , YOSHIZAWA, Mitsuru , SETO, Masahiro , TANAKA, Katsuki
- 申请人: Nippon Steel & Sumitomo Metal Corporation
- 申请人地址: 6-1, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8071 JP
- 专利权人: Nippon Steel & Sumitomo Metal Corporation
- 当前专利权人: Nippon Steel & Sumitomo Metal Corporation
- 当前专利权人地址: 6-1, Marunouchi 2-chome Chiyoda-ku Tokyo 100-8071 JP
- 代理机构: TBK
- 优先权: JP2010131613 20100609
- 国际公布: WO2011155296 20111215
- 主分类号: C22C38/00
- IPC分类号: C22C38/00 ; C21D7/06 ; C22C38/58
摘要:
There is provided an austenitic stainless steel pipe excellent in steam oxidation resistance. The austenitic stainless steel pipe excellent in steam oxidation resistance contains, by mass percent, 14 to 28% of Cr and 6 to 30% of Ni, and is configured so that a region satisfying the following Formula exists in a metal structure at a depth of 5 to 20 µm from the inner surface of the steel pipe: α / β × δ / ε × 100 ≥ 0.3
where the meanings of symbols in the above Formula are as follows:
α: sum total of the number of pixels of digital image in region in which orientation difference of adjacent crystals detected by electron backscattering pattern is 5 to 50 degrees
β: the number of total pixels of digital image in region of measurement using electron backscattering pattern
ε: analysis pitch width of electron backscattering pattern (µm)
δ: grain boundary width (µm).
where the meanings of symbols in the above Formula are as follows:
α: sum total of the number of pixels of digital image in region in which orientation difference of adjacent crystals detected by electron backscattering pattern is 5 to 50 degrees
β: the number of total pixels of digital image in region of measurement using electron backscattering pattern
ε: analysis pitch width of electron backscattering pattern (µm)
δ: grain boundary width (µm).
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