发明公开
- 专利标题: ELECTRODE FOR ELECTRIC STORAGE DEVICE, METHOD FOR MANUFACTURING THE ELECTRODE, AND METHOD FOR CONNECTING THE ELECTRODE
- 专利标题(中): 电极上对电记忆,方法生产电极和方法将电极导管连接
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申请号: EP11798012.8申请日: 2011-06-14
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公开(公告)号: EP2587505A1公开(公告)日: 2013-05-01
- 发明人: NAKAMURA Katsuji , TSURUTA Kaichi , OZAKI Yuji , WATARAI Shigeaki , TAKAGI Hidenori , OHORI Yutaka
- 申请人: Senju Metal Industry Co., Ltd
- 申请人地址: 23 Senju-Hashido-cho Adachi-ku Tokyo 120-8555 JP
- 专利权人: Senju Metal Industry Co., Ltd
- 当前专利权人: Senju Metal Industry Co., Ltd
- 当前专利权人地址: 23 Senju-Hashido-cho Adachi-ku Tokyo 120-8555 JP
- 代理机构: Ealey, Douglas Ralph
- 优先权: JP2010145566 20100625
- 国际公布: WO2011162126 20111229
- 主分类号: H01G9/058
- IPC分类号: H01G9/058 ; C23C18/31 ; C25D7/00 ; H01M2/20 ; H01M2/26 ; H01M2/30
摘要:
To increase a ground contact area in comparison with the conventional jointing by the spot-welding or the conventional fastening by a bolt so that the resistance value at the contacting point is reduced and the voltage of the energy storage device can be effectively supplied without any drop of the voltage.
Zn layer 21 or Zn alloy layer, Ni layer 22, and Sn layer 23 or Sn alloy layer are formed on a connecting terminal part 10a of a positive electrode composed of Al by plating. Accordingly, this can solder Cu negative electrode, which is composed of metal that is different species from Al, through Sn layer 23 or Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. Further, since the ground contact area is increased in comparison with the conventional jointing by the spot-welding or the conventional fastening by a bolt so that the resistance value at the contacting point is reduced, the voltage drop of the energy storage device by contact resistance can be reduced.
Zn layer 21 or Zn alloy layer, Ni layer 22, and Sn layer 23 or Sn alloy layer are formed on a connecting terminal part 10a of a positive electrode composed of Al by plating. Accordingly, this can solder Cu negative electrode, which is composed of metal that is different species from Al, through Sn layer 23 or Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. Further, since the ground contact area is increased in comparison with the conventional jointing by the spot-welding or the conventional fastening by a bolt so that the resistance value at the contacting point is reduced, the voltage drop of the energy storage device by contact resistance can be reduced.
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