发明授权
EP2597677B1 Semiconductor device with through-substrate via covered by a solder ball and related method of production
有权
具有半导体器件衬底通道由焊料球覆盖，并且相关联的制造方法
- 专利标题： Semiconductor device with through-substrate via covered by a solder ball and related method of production
- 专利标题（中）： 具有半导体器件衬底通道由焊料球覆盖，并且相关联的制造方法
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申请号： EP11190389.4申请日： 2011-11-23
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公开(公告)号： EP2597677B1公开(公告)日： 2014-08-06
- 发明人: Cassidy, Cathal , Schrems, Martin , Schrank, Franz
- 申请人： ams AG
- 申请人地址： Schloss Premstätten Tobelbader Strasse 30 8141 Unterpremstätten AT
- 专利权人： ams AG
- 当前专利权人： ams AG
- 当前专利权人地址： Schloss Premstätten Tobelbader Strasse 30 8141 Unterpremstätten AT
- 代理机构： Epping - Hermann - Fischer
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L25/065 ; H01L23/00 ; H01L21/768
摘要：
The semiconductor device comprises a semiconductor substrate (10) with a metallization (111) having an upper terminal layer (22) located at a front side (20) of the substrate. The metallization forms a through-substrate via (23) from the upper terminal layer to a rear terminal layer (13) located opposite to the front side at a rear side (21) of the substrate. The through-substrate via comprises a void (101), which may be filled with air or another gas. A solder ball (100) closes the void without completely filling it. A variety of interconnections for threedimensional integration is offered by this scheme.
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