In at least one embodiment of the optoelectronic semiconductor component (1), the latter comprises an optoelectonic semiconductor chip (2). The semiconductor component (1) furthermore comprises at least one scattering body (34) comprising a radiation-transmissive matrix material (3) and scattering particles (4) composed of a particle material embedded therein. The scattering body (34) is disposed downstream of the semiconductor chip (2). In the event of a temperature change, a difference in refractive index between the matrix material (3) and the particle material changes. At a temperature of 300 K, the difference in refractive index between the matrix material (3) and the particle material is at most 0.15.