Invention Grant
- Patent Title: REDUCED CURRENT REQUIREMENTS FOR DRAM SELF-REFRESH MODES
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Application No.: EP11827743.3Application Date: 2011-09-26
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Publication No.: EP2619763B1Publication Date: 2018-08-22
- Inventor: BAINS, Kuljit S.
- Applicant: Intel Corporation
- Applicant Address: 2200 Mission College Boulevard Santa Clara, CA 95054 US
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: 2200 Mission College Boulevard Santa Clara, CA 95054 US
- Agency: Goddar, Heinz J.
- Priority: US890083 20100924
- International Announcement: WO2012040730 20120329
- Main IPC: G11C11/401
- IPC: G11C11/401 ; G11C11/4063 ; G06F12/00 ; G11C11/406 ; G06F13/16 ; G11C7/04
Abstract:
Embodiments of the invention describe systems, methods, and apparatuses to reduce the instantaneous power necessary to execute a DRAM device initiated self-refresh. Embodiments of the invention describe a DRAM device enabled to stagger self-refreshes between a plurality of banks. Staggering self-refreshes between banks reduces the current required for a DRAM self-refresh, thus reducing the amount of current required by the DRAM device.
Public/Granted literature
- EP2619763A1 REDUCED CURRENT REQUIREMENTS FOR DRAM SELF-REFRESH MODES Public/Granted day:2013-07-31
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