发明公开
EP2639818A3 Semiconductor device and manufacturing method thereof
审中-公开
Halbleiterbauelement und Herstellungsverfahrendafür
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： Halbleiterbauelement und Herstellungsverfahrendafür
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申请号： EP13157686.0申请日： 2013-03-04
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公开(公告)号： EP2639818A3公开(公告)日： 2017-01-18
- 发明人: Kaneoka, Tatsunori , Kawahara, Takaaki
- 申请人： Renesas Electronics Corporation
- 申请人地址： 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 JP
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 JP
- 代理机构： Addiss, John William
- 优先权： JP2012055693 20120313
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/423 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L29/66
摘要：
A semiconductor device with a nonvolatile memory is provided which has improved electric performance. A memory gate electrode (MG) is formed over a semiconductor substrate (1) via an insulating film (5). The insulating film is an insulating film having a charge storage portion therein, and includes a first silicon oxide film (5a), a silicon nitride film (5b) over the first silicon oxide film, and a second silicon oxide film (5c) over the silicon nitride film. Metal elements (6) exist between the silicon nitride film and the second silicon oxide film, or in the silicon nitride film at a surface density of 1 × 10 13 to 2 × 10 14 atoms/cm 2 .
公开/授权文献
- EP2639818A2 Semiconductor device and manufacturing method thereof 公开/授权日：2013-09-18
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