发明公开
- 专利标题： Graphene-based semiconductor device
- 专利标题（中）： Halbleitervorrichtung auf Graphenbasis
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申请号： EP12168995.4申请日： 2012-05-23
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公开(公告)号： EP2667417A1公开(公告)日： 2013-11-27
- 发明人: Nourbakhsh, Amirhasan , Cantoro, Mirco , Huyghebaert, Cedric , Heyns, Marc , De Gendt, Stefan
- 申请人： IMEC , Katholieke Universiteit Leuven
- 申请人地址： Kapeldreef 75 3001 Leuven BE
- 专利权人： IMEC,Katholieke Universiteit Leuven
- 当前专利权人： IMEC,Katholieke Universiteit Leuven
- 当前专利权人地址： Kapeldreef 75 3001 Leuven BE
- 代理机构： Ego, Christophe
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/16
摘要：
A semiconductor device comprising:
o a bilayer graphene comprising a first and a second adjacent graphene layer,
o a first electrically insulating layer contacting said first graphene layer, said first electrically insulating layer comprising:
■ an electrically insulating material, and
■ a substance suitable for creating free charge carriers of a first type in said first graphene layer, and
an electrically insulating region contacting said second graphene layer and suitable for creating free charge carriers of a second type, opposite to said first type, in said second graphene layer.
o a bilayer graphene comprising a first and a second adjacent graphene layer,
o a first electrically insulating layer contacting said first graphene layer, said first electrically insulating layer comprising:
■ an electrically insulating material, and
■ a substance suitable for creating free charge carriers of a first type in said first graphene layer, and
an electrically insulating region contacting said second graphene layer and suitable for creating free charge carriers of a second type, opposite to said first type, in said second graphene layer.
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IPC分类:
