发明公开
- 专利标题: CHARGE PUMP SURGE CURRENT REDUCTION
- 专利标题(中): 峰值功率降低系统泵
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申请号: EP12713449.2申请日: 2012-03-14
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公开(公告)号: EP2686945A2公开(公告)日: 2014-01-22
- 发明人: QUAN, Xiaohong , SRIVASTAVA, Ankit , MIAO, Guoqing
- 申请人: Qualcomm Incorporated
- 申请人地址: 5775 Morehouse Drive San Diego, CA 92121 US
- 专利权人: Qualcomm Incorporated
- 当前专利权人: Qualcomm Incorporated
- 当前专利权人地址: 5775 Morehouse Drive San Diego, CA 92121 US
- 代理机构: Wagner, Karl H.
- 优先权: US201113047689 20110314
- 国际公布: WO2012125766 20120920
- 主分类号: H02M3/07
- IPC分类号: H02M3/07
摘要:
Techniques for reducing surge current in charge pumps. In an exemplary embodiment, one or more switches coupling a terminal of a flying capacitor to a voltage supply are configured to have variable on-resistance. When the charge pump is configured to switch a gain mode from a lower gain to a higher gain, the one or more variable resistance switches are configured to have a decreasing resistance profile over time. In this manner, surge current drawn from the voltage supply at the outset of the gain switch may be limited, while the on-resistance during steady-state charging and discharging may be kept low. Similar techniques are provided to decrease the surge current from a bypass switch coupling the supply voltage to a positive output voltage of the charge pump.
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