发明公开
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： EP12793073.3申请日： 2012-05-24
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公开(公告)号： EP2717302A1公开(公告)日： 2014-04-09
- 发明人: SHIMOBE Yasuo , MURAYAMA Ryuichi , MITOTE Keiji
- 申请人： Sumitomo Bakelite Company Limited
- 申请人地址： 5-8 Higashi-Shinagawa 2-chome Shinagawa-ku Tokyo 140-0002 JP
- 专利权人： Sumitomo Bakelite Company Limited
- 当前专利权人： Sumitomo Bakelite Company Limited
- 当前专利权人地址： 5-8 Higashi-Shinagawa 2-chome Shinagawa-ku Tokyo 140-0002 JP
- 代理机构： Schnappauf, Georg
- 优先权： JP2011119606 20110527
- 国际公布： WO2012165273 20121206
- 主分类号： H01L21/52
- IPC分类号： H01L21/52
摘要：
According to the present invention, a semiconductor having excellent yield is provided. The semiconductor device (10) of the present invention includes :
a base material(die pad) (2), a semiconductor element(3), and an adhesive layer(1) intervening the space between the base material and the semiconductor element (3) to adhere the base material and the semiconductor element. Thermal conductive filler (8) is contained in the adhesive layer (1), and when the content of the thermal conductive filler dispersed in the whole of the adhesive layer is expressed as C,
the content of the thermal conductive filler in the region 1 ranging from the interface of the adhesive layer at the side of the semiconductor element to the depth by 2µm is expressed as C1, and the content of the thermal conductive filler in the region 2 ranging from the interface of the adhesive layer at the side of the base material to the depth by 2µm is expressed as C2, the following formulae are satisfied:
C1
a base material(die pad) (2), a semiconductor element(3), and an adhesive layer(1) intervening the space between the base material and the semiconductor element (3) to adhere the base material and the semiconductor element. Thermal conductive filler (8) is contained in the adhesive layer (1), and when the content of the thermal conductive filler dispersed in the whole of the adhesive layer is expressed as C,
the content of the thermal conductive filler in the region 1 ranging from the interface of the adhesive layer at the side of the semiconductor element to the depth by 2µm is expressed as C1, and the content of the thermal conductive filler in the region 2 ranging from the interface of the adhesive layer at the side of the base material to the depth by 2µm is expressed as C2, the following formulae are satisfied:
C1
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