发明公开
- 专利标题： METHOD FOR ESTIMATING THE END OF LIFETIME FOR A POWER SEMICONDUCTOR DEVICE
- 专利标题（中）： 一种估计寿命功率半导体元件的末端
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申请号： EP12733004.1申请日： 2012-06-21
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公开(公告)号： EP2724170A1公开(公告)日： 2014-04-30
- 发明人: THØGERSEN, Paul Bach , RANNESTAD, Bjørn
- 申请人： KK-Electronic A/S
- 申请人地址： 7430 Ikast DK
- 专利权人： KK-Electronic A/S
- 当前专利权人： KK-Electronic A/S
- 当前专利权人地址： 7430 Ikast DK
- 代理机构： Høiberg A/S
- 优先权： EP11170704 20110621; US201161534565P 20110914
- 国际公布： WO2012175603 20121227
- 主分类号： G01R31/26
- IPC分类号： G01R31/26
摘要：
The invention regards an method for estimating the end of lifetime for a power semiconductor device, such as an IGBT power module, comprising the steps of; establishing the temperature of the power semiconductor device, determining the voltage drop over the power semiconductor device for at least one predetermined current where the current is applied when the power semiconductor device is not in operation, wherein the end of lifetime is established dependent on the change in a plurality of determined voltage drops.
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