发明公开
EP2724385A1 PROCÉDÉ DE TRAITEMENT D'UNE CELLULE PHOTOVOLTAÏQUE A HÉTÉROJONCTION 审中-公开
方法的治疗异质结光伏电池

PROCÉDÉ DE TRAITEMENT D'UNE CELLULE PHOTOVOLTAÏQUE A HÉTÉROJONCTION
摘要:
The invention provides a process for treating an n-type photovoltaic cell free from all but trace amounts of boron atoms, said process comprising the following steps: providing an n-type heterojunction photovoltaic cell (10) comprising a central crystalline silicon layer (1) on and under which two passivation layers (2, 3) made of hydrogenated amorphous silicon are deposited; heating this cell to a temperature between 20
o C and 200
o C, for example on a hot plate (20) or in an oven (40), while illuminating the photovoltaic cell with a light flux from a light source (30). The efficiency of the photovoltaic cell is thus improved and stabilized.
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