发明公开
EP2733729A2 Semiconductor device and method for producing the same
审中-公开
Halbleitervorrichtung und Verfahren zur Herstellung davon
- 专利标题： Semiconductor device and method for producing the same
- 专利标题（中）： Halbleitervorrichtung und Verfahren zur Herstellung davon
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申请号： EP13193352.5申请日： 2013-11-18
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公开(公告)号： EP2733729A2公开(公告)日： 2014-05-21
- 发明人: Suda, Toru
- 申请人： J-Devices Corporation
- 申请人地址： 1913-2 Fukura Usuki-City Oita 875-0053 JP
- 专利权人： J-Devices Corporation
- 当前专利权人： J-Devices Corporation
- 当前专利权人地址： 1913-2 Fukura Usuki-City Oita 875-0053 JP
- 代理机构： Ahner, Philippe
- 优先权： JP2012253070 20121119
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L23/00 ; H01L25/065
摘要：
A semiconductor device includes a rectangular lower semiconductor element (6); a plurality of external electrodes (9) located in a pattern on the lower semiconductor element along sides thereof; a plurality of internal electrodes electrically connected to the plurality of external electrodes via a plurality of line patterns respectively and located on the lower semiconductor element in a pattern; dams (12) provided in such a pattern that each of the dams encloses one or at least two external electrodes among the plurality of external electrodes; an upper semiconductor element (5) mounted on the lower semiconductor element (6) such that a plurality of terminals on the upper semiconductor element are electrically connected to the plurality of internal electrodes respectively; and a resin (4) potted to flow to a space between the lower semiconductor element and the upper semiconductor element.
公开/授权文献
- EP2733729A3 Semiconductor device and method for producing the same 公开/授权日：2016-09-21
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