发明公开
EP2761660A1 BIPOLAR JUNCTION TRANSISTOR WITH SPACER LAYER AND METHOD OF MANUFACTURING THE SAME
有权
BIPOLARTRANSISTOR MIT ABSTANDHALTERSCHICHT UND HERSTELLUNGSVERFAHRENDAFÜR
- 专利标题： BIPOLAR JUNCTION TRANSISTOR WITH SPACER LAYER AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： BIPOLARTRANSISTOR MIT ABSTANDHALTERSCHICHT UND HERSTELLUNGSVERFAHRENDAFÜR
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申请号： EP12700407.5申请日： 2012-01-18
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公开(公告)号： EP2761660A1公开(公告)日： 2014-08-06
- 发明人: KONSTANTINOV, Andrei
- 申请人： Fairchild Semiconductor Corporation
- 申请人地址： 3030 Orchard Parkway San Jose, CA 95134 US
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 当前专利权人地址： 3030 Orchard Parkway San Jose, CA 95134 US
- 代理机构： Badel, Xavier Claude Yves
- 国际公布： WO2013107508 20130725
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/732 ; H01L29/16 ; H01L21/331
摘要：
New designs for silicon carbide (SiC) bipolar junction transistors (BJTs) and new methods of manufacturing such SiC BJTs are provided. The SiC BJT comprises a collector region (220), a base region (240) and an emitter region (260) arranged as a stack, the emitter region and part of the base region forming a mesa. The intrinsic part of the base region includes a first portion having a first doping concentration and a second portion having a second doping concentration lower than the first doping concentration. Further, the second portion is vertically arranged between the first portion and the emitter region in the stack.
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