发明公开
EP2774183A1 A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF AN n-DOPED SEMICONDUCTOR SUBSTRATE
审中-公开
用于生产的N型掺杂的半导体衬底P掺杂铝表面面积
- 专利标题： A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF AN n-DOPED SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 用于生产的N型掺杂的半导体衬底P掺杂铝表面面积
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申请号： EP12787620.9申请日： 2012-11-05
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公开(公告)号： EP2774183A1公开(公告)日： 2014-09-10
- 发明人: HANG, Kenneth Warren , PRINCE, Alistair Graeme , ROSE, Michael , YOUNG, Richard John Sheffield
- 申请人： E. I. Du Pont de Nemours and Company
- 申请人地址： 1007 Market Street Wilmington, Delaware 19899 US
- 专利权人： E. I. Du Pont de Nemours and Company
- 当前专利权人： E. I. Du Pont de Nemours and Company
- 当前专利权人地址： 1007 Market Street Wilmington, Delaware 19899 US
- 代理机构： Hoffmann, Benjamin
- 优先权： US201161555519P 20111104
- 国际公布： WO2013067493 20130510
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/18
摘要：
A process for the formation of at least one aluminum p-doped surface region of an n-type semiconductor substrate comprising the steps: (1) providing an n-type semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the n-type semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.
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