发明公开
EP2774187A1 A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF A SEMICONDUCTOR SUBSTRATE
审中-公开
用于生产半导体衬底的p型掺杂铝表面区域
- 专利标题： A PROCESS OF FORMING AN ALUMINUM p-DOPED SURFACE REGION OF A SEMICONDUCTOR SUBSTRATE
- 专利标题（中）： 用于生产半导体衬底的p型掺杂铝表面区域
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申请号： EP12798919.2申请日： 2012-11-05
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公开(公告)号： EP2774187A1公开(公告)日： 2014-09-10
- 发明人: HANG, Kenneth Warren , PRINCE, Alistair Graeme , ROSE, Michael , YOUNG, Richard John Sheffield
- 申请人： E. I. Du Pont de Nemours and Company
- 申请人地址： 1007 Market Street Wilmington, Delaware 19899 US
- 专利权人： E. I. Du Pont de Nemours and Company
- 当前专利权人： E. I. Du Pont de Nemours and Company
- 当前专利权人地址： 1007 Market Street Wilmington, Delaware 19899 US
- 代理机构： Hoffmann, Benjamin
- 优先权： US201161555516P 20111104
- 国际公布： WO2013067490 20130510
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/0224 ; H01L21/22 ; H01L21/225
摘要：
A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: (1) providing a semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt.% of glass frit, based on total aluminum paste composition.
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