发明公开
- 专利标题： CRYSTAL SENSOR MADE BY ION IMPLANTATION
- 专利标题（中）： 离子注入法人造水晶SENSOR
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申请号： EP12854505申请日： 2012-11-12
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公开(公告)号： EP2786178A4公开(公告)日： 2015-11-11
- 发明人: LIU YI , MONTEIRO OTHON , SANDERLIN KERRY L , CSUTAK SEBASTIAN
- 申请人： BAKER HUGHES INC , LIU YI , MONTEIRO OTHON , SANDERLIN KERRY L , CSUTAK SEBASTIAN
- 专利权人： BAKER HUGHES INC,LIU YI,MONTEIRO OTHON,SANDERLIN KERRY L,CSUTAK SEBASTIAN
- 当前专利权人： BAKER HUGHES INC,LIU YI,MONTEIRO OTHON,SANDERLIN KERRY L,CSUTAK SEBASTIAN
- 优先权： US201113307801 2011-11-30
- 主分类号： G01V3/18
- IPC分类号： G01V3/18 ; E21B47/10 ; E21B47/12 ; E21B49/10 ; G01N29/02 ; G01N29/24 ; G01V3/32 ; H02N2/00
摘要：
Disclosed is a method for producing a crystal sensor. The method includes selecting a crystal configured to sense a property of interest. The method further includes implanting ions in the crystal using ion-implantation to produce a conductive region within the crystal where the conductive region is capable of providing a signal to sense the property of interest. Also disclosed is a method and apparatus for estimating a property of interest using the crystal sensor in a borehole penetrating the earth.
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