发明公开
- 专利标题： Semiconductor detector
- 专利标题（中）： Halbleiterdetektor
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申请号： EP14150977.8申请日： 2014-01-13
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公开(公告)号： EP2796897A1公开(公告)日： 2014-10-29
- 发明人: Li, Yuanjing , Zhang, Lan , Li, Yulan , Liu, Yinong , Fu, Jianqiang , Jiang, Hao , Deng, Zhi , Xue, Tao , Zhang, Wei , Li, Jun
- 申请人： Tsinghua University , Nuctech Company Limited
- 申请人地址： Shuangqinglu Haidian District Beijing 100084 CN
- 专利权人： Tsinghua University,Nuctech Company Limited
- 当前专利权人： Tsinghua University,Nuctech Company Limited
- 当前专利权人地址： Shuangqinglu Haidian District Beijing 100084 CN
- 代理机构： Rüger, Barthelt & Abel
- 优先权： CN201310149397 20130426; CN201320218487U 20130426
- 主分类号： G01T1/24
- IPC分类号： G01T1/24
摘要：
The invention provides a semiconductor detector (100), and the semiconductor detector (100) comprises a semiconductor crystal (101), a cathode (102), an anode (103) and at least one ladder electrode (104); the semiconductor crystal (101) comprises a top surface (101-2), a bottom surface (101-1) and at least one side (101-3); the cathode (102), the anode (103) and the ladder electrode (104) are conductive thin films deposited on a surface of the semiconductor crystal (101); the cathode (102) is disposed on the bottom surface (101-1) of the semiconductor crystal (101), the anode (103) is disposed on the top surface (101-2) of the semiconductor crystal (101), the ladder electrode (104) is disposed on the at least one side (101-3) of the semiconductor crystal (101); and the ladder electrode (104) comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.
公开/授权文献
- EP2796897B1 Semiconductor detector 公开/授权日：2019-04-17
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