发明公开
- 专利标题： STRUCTURE SEMICONDUCTRICE, DISPOSITIF COMPORTANT UNE TELLE STRUCTURE ET PROCEDE DE FABRICATION D'UNE STRUCTURE SEMICONDUCTRICE
- 专利标题（英）： Semiconductor structure, device comprising such a structure, and method for producing a semiconductor structure
- 专利标题（中）： 半导体结构，该半导体结构和方法半导体结构的器件
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申请号： EP13700059.2申请日： 2013-01-02
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公开(公告)号： EP2801117A2公开(公告)日： 2014-11-12
- 发明人: GRAVRAND, Olivier , FERRON, Alexandre
- 申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 申请人地址： 25, rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 专利权人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人地址： 25, rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 代理机构： Brevalex
- 优先权： FR1250086 20120104
- 国际公布： WO2013102631 20130711
- 主分类号： H01L31/09
- IPC分类号： H01L31/09 ; H01L31/103 ; H01L31/18
摘要：
The invention relates to a semiconductor structure (5) capable of receiving electromagnetic radiation (λ) and converting same into an electrical signal comprising first and second areas (20, 60) having the same type of conductivity and consisting of the same elements. The structure further comprises a barrier area (40), which is arranged between the first area and the second area (20, 60) and which is to be used as a barrier to the majority carriers of the first and second areas (20, 60) over a barrier thickness, the smallest band gap width of the barrier area (40) defining a barrier proportion. The structure (5) comprises a first interface area (30) arranged so as to form an interface between the first area (20) and the barrier area (40) over a first interface thickness, the composition of elements of the first interface area varying by a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half of the barrier thickness.
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