发明公开
EP2803088A1 PROCEDE POUR REALISER UN MODULE PHOTOVOLTAÏQUE AVEC DEUX ETAPES DE GRAVURE P1 ET P3 ET MODULE PHOTOVOLTAÏQUE CORRESPONDANT
审中-公开
用于生产光伏模块两个蚀刻步骤P1和P3以及对应PV模块
- 专利标题： PROCEDE POUR REALISER UN MODULE PHOTOVOLTAÏQUE AVEC DEUX ETAPES DE GRAVURE P1 ET P3 ET MODULE PHOTOVOLTAÏQUE CORRESPONDANT
- 专利标题（英）： Method for manufacturing a photovoltaic module with two etching steps p1 and p3 and corresponding photovoltaic module
- 专利标题（中）： 用于生产光伏模块两个蚀刻步骤P1和P3以及对应PV模块
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申请号： EP13704491.3申请日： 2013-01-09
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公开(公告)号： EP2803088A1公开(公告)日： 2014-11-19
- 发明人: KARST, Nicolas , AMTABLIAN, Sevak , PERRAUD, Simon
- 申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 申请人地址： Bâtiment le Ponant D 25 rue Leblanc 75015 Paris FR
- 专利权人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人地址： Bâtiment le Ponant D 25 rue Leblanc 75015 Paris FR
- 代理机构： Corret, Hélène
- 优先权： FR1250291 20120111
- 国际公布： WO2013105024 20130718
- 主分类号： H01L27/142
- IPC分类号： H01L27/142
摘要：
The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following are formed consecutively in the structure: an electrode on the rear surface (41), a photovoltaic layer (43) obtained by depositing components including metal precursors and at least one element taken from Se and S and by annealing such as to convert said components into a semiconductor material, and another semiconductor layer (44) in order to create a pn junction with the photovoltaic layer (43); characterised in that the metal precursors form, on the electrode on the rear surface (41), a continuous layer, while said at least one element forms a layer having at least one break making it possible, at the end of the annealing step, to leave an area (430) of the layer of metal precursors in the metal state at said break.
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