发明公开
- 专利标题： Tantalum precursors and their use
- 专利标题（中）： Tantalvorläuferund deren Verwendung
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申请号： EP13305705.9申请日： 2013-05-30
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公开(公告)号： EP2808332A1公开(公告)日： 2014-12-03
- 发明人: Lachaud, Christophe , Correia - Anacleto, Antony , Lahootun, Vanina , Zauner, Andreas
- 申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
- 申请人地址： 75, Quai d'Orsay 75007 Paris FR
- 专利权人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
- 当前专利权人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
- 当前专利权人地址： 75, Quai d'Orsay 75007 Paris FR
- 代理机构： Grout de Beaufort, François-Xavier
- 主分类号： C07F9/00
- IPC分类号： C07F9/00 ; C23C16/18 ; C23C16/455
摘要：
A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of:
a) providing a vapor comprising at least one precursor compound according to the invention;
b) reacting the vapor comprising the at least one compound according to the invention with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.
a) providing a vapor comprising at least one precursor compound according to the invention;
b) reacting the vapor comprising the at least one compound according to the invention with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.
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