发明公开
- 专利标题: VERSIONED MEMORIES USING A MULTI-LEVEL CELL
- 专利标题(中): 具有多级电池版有关的记忆
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申请号: EP12869720.8申请日: 2012-03-02
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公开(公告)号: EP2820548A1公开(公告)日: 2015-01-07
- 发明人: YOON, Doe Hyun , CHANG, Jichuan , MURALIMANOHAR, Naveen , SCHREIBER, Robert , FARABOSCHI, Paolo , RANGANATHAN, Parthasarathy
- 申请人: Hewlett-Packard Development Company, L.P.
- 申请人地址: 11445 Compaq Center Drive West Houston, TX 77070 US
- 专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人: Hewlett-Packard Development Company, L.P.
- 当前专利权人地址: 11445 Compaq Center Drive West Houston, TX 77070 US
- 代理机构: Williams Powell
- 国际公布: WO2013130106 20130906
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F11/14
摘要:
Versioned memories using a multi-level cell (MLC) are disclosed. An example method includes comparing a global memory version to a block memory version, the global memory version corresponding to a plurality of memory blocks, the block memory version corresponding to one of the plurality of memory blocks. The example method includes determining, based on the comparison, which level in a multi-level cell of the one of the plurality of memory blocks stores checkpoint data.
公开/授权文献
- EP2820548B1 VERSIONED MEMORIES USING A MULTI-LEVEL CELL 公开/授权日:2016-12-14
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