发明公开
EP2832900A4 LAMINATED SUBSTATE OF SILICON SINGLE CRYSTAL AND GROUP III NITRIDE SINGLE CRYSTAL WITH OFF ANGLE
有权
层叠基板晶体硅和III族氮化物单晶WITH传送角度
- 专利标题： LAMINATED SUBSTATE OF SILICON SINGLE CRYSTAL AND GROUP III NITRIDE SINGLE CRYSTAL WITH OFF ANGLE
- 专利标题（中）： 层叠基板晶体硅和III族氮化物单晶WITH传送角度
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申请号： EP12873342申请日： 2012-11-01
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公开(公告)号： EP2832900A4公开(公告)日： 2015-09-30
- 发明人: NARITA TETSUO , ITO KENJI , TOMITA KAZUYOSHI , OTAKE NOBUYUKI , HOSHI SHINICHI , MATSUI MASAKI
- 申请人： TOYOTA CHUO KENKYUSHO KK , DENSO CORP
- 专利权人： TOYOTA CHUO KENKYUSHO KK,DENSO CORP
- 当前专利权人： TOYOTA CHUO KENKYUSHO KK,DENSO CORP
- 优先权： JP2012074182 2012-03-28
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; C23C16/34 ; C30B25/18 ; C30B25/20 ; C30B29/38 ; C30B29/40 ; H01L21/205 ; H01L29/04 ; H01L29/20 ; H01L33/00 ; H01L33/32
摘要：
A step-flow growth of a group-III nitride single crystal on a silicon single crystal substrate is promoted. A layer of oxide oriented to a axis of silicon single crystal is formed on a surface of a silicon single crystal substrate, and group-III nitride single crystal is crystallized on a surface of the layer of oxide. Thereupon, a axis of the group-III nitride single crystal undergoing crystal growth is oriented to a c-axis of the oxide. When the silicon single crystal substrate is provided with a miscut angle, step-flow growth of the group-III nitride single crystal occurs. By deoxidizing a silicon oxide layer formed at an interface of the silicon single crystal and the oxide, orientation of the oxide is improved.
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