发明公开
EP2908337A1 Semiconductor device with a thermally stable bump contact on a TSV and method of producing such a semiconductor device
审中-公开
一种半导体器件，包括：在TSV用于制造这种半导体器件的热稳定的抵接和方法
- 专利标题： Semiconductor device with a thermally stable bump contact on a TSV and method of producing such a semiconductor device
- 专利标题（中）： 一种半导体器件，包括：在TSV用于制造这种半导体器件的热稳定的抵接和方法
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申请号： EP14154852.9申请日： 2014-02-12
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公开(公告)号： EP2908337A1公开(公告)日： 2015-08-19
- 发明人: Schrems, Martin , Stering, Bernhard , Etschmaier, Harald
- 申请人： ams AG
- 申请人地址： Schloss Premstätten Tobelbader Strasse 30 8141 Unterpremstätten AT
- 专利权人： ams AG
- 当前专利权人： ams AG
- 当前专利权人地址： Schloss Premstätten Tobelbader Strasse 30 8141 Unterpremstätten AT
- 代理机构： Epping - Hermann - Fischer
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L23/31
摘要：
The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a cover layer (2) arranged above the TSV at the main surface, a bump contact (6) arranged on the TSV at the further main surface, and a stress relief feature at the main surface or at the further main surface. The stress relief feature is provided to expose the TSV at least partially to the environment, which can be the ambient air, for instance, or any region of the device lying outside the region occupied by the TSV. The stress relief feature can be a channel (8) in an under-bump metallization (5).
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