发明公开
EP2917788A2 PROCÉDÉ DE RÉALISATION D'UN ÉLÉMENT FLEXIBLE MULTISTABLE 有权
用于生产MULTI稳定弹性元件

  • 专利标题: PROCÉDÉ DE RÉALISATION D'UN ÉLÉMENT FLEXIBLE MULTISTABLE
  • 专利标题(英): Method for the production of a multistable flexible element
  • 专利标题(中): 用于生产MULTI稳定弹性元件
  • 申请号: EP13789254.3
    申请日: 2013-11-06
  • 公开(公告)号: EP2917788A2
    公开(公告)日: 2015-09-16
  • 发明人: STRANCZL, MarcHESSLER, Thierry
  • 申请人: Nivarox-FAR S.A.
  • 申请人地址: Avenue du Collège 10 2400 Le Locle CH
  • 专利权人: Nivarox-FAR S.A.
  • 当前专利权人: Nivarox-FAR S.A.
  • 当前专利权人地址: Avenue du Collège 10 2400 Le Locle CH
  • 代理机构: Giraud, Eric
  • 优先权: EP12192026 20121109
  • 国际公布: WO2014072317 20140515
  • 主分类号: G04B17/26
  • IPC分类号: G04B17/26 G04B15/14
PROCÉDÉ DE RÉALISATION D'UN ÉLÉMENT FLEXIBLE MULTISTABLE
摘要:
The invention relates to a method for the production of a multistable flexible element (5), consisting in: etching a silicon component (S) in which a beam (P) connects two ends (E1; E2) of a rigid mass (MU) having a cross-section more than ten times greater than that of the beam (P); growing SiO
2 , at 1100°C, for a period adjusted to obtain: at the beam (P), a first ratio (RA) greater than 1 between the cross-section of a first peripheral layer (CP1) of SiO
2 and that of a first silicon core (A1); and, at the mass (MU), a second ratio (RB) between the cross-section of a second peripheral layer (CP2) of SiO
2 and that of a second silicon core (A2), which is less than one hundredth of the first ratio (RA); cooling to ambient temperature in order to buckle the beam (P) during the cooling of the mass (MU), said mass contracting more than the beam (P).
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