发明公开
EP2981992A1 SILANE FUNCTIONALIZED BUFFER LAYERS AND ELECTRONIC DEVICES COMPRISING THE SAME
审中-公开
使硅烷官能缓冲层和电子设备THAT
- 专利标题： SILANE FUNCTIONALIZED BUFFER LAYERS AND ELECTRONIC DEVICES COMPRISING THE SAME
- 专利标题（中）： 使硅烷官能缓冲层和电子设备THAT
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申请号： EP14715826.5申请日： 2014-04-02
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公开(公告)号： EP2981992A1公开(公告)日： 2016-02-10
- 发明人: LÜCHINGER, Norman Albert , HALIM, Samuel Claude , STUBHAN, Tobias , BRABEC, Christoph
- 申请人： nanograde AG
- 申请人地址： Laubisrütistrasse 50 8712 Stäfa CH
- 专利权人： nanograde AG
- 当前专利权人： nanograde AG
- 当前专利权人地址： Laubisrütistrasse 50 8712 Stäfa CH
- 代理机构： Grimm, Siegfried
- 优先权： EP13001705 20130403
- 国际公布： WO2014161100 20141009
- 主分类号： H01L51/50
- IPC分类号： H01L51/50 ; H01L51/44 ; H01L51/00
摘要：
The present invention relates to the field of organic electronics, such as OLEDs, OPVs and organic photodetectors with inverted structure. Said device comprises a substrate and a multitude of layers, wherein at least one of said layers is a buffer layer, wherein said buffer layer comprises metal oxide nanoparticles coated with unsubstituted or substituted alkyl-alkoxy-silanes. Preferably, the buffer layer is used as a cathode buffer layer.
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