发明公开
- 专利标题： MEMORY NODE ERROR CORRECTION
- 专利标题（中）： 存储器节点误差校正
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申请号： EP13883432.0申请日： 2013-04-30
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公开(公告)号： EP2992435A1公开(公告)日： 2016-03-09
- 发明人: LI, Sheng , JOUPPI, Norman Paul , FARABOSCHI, Paolo , YOON, Doe Hyun , BARRON, Dwight L.
- 申请人： Hewlett-Packard Development Company, L.P.
- 申请人地址： 11445 Compaq Center Drive W. Houston, Texas 77070 US
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： 11445 Compaq Center Drive W. Houston, Texas 77070 US
- 代理机构： Zimmermann, Tankred Klaus
- 国际公布： WO2014178855 20141106
- 主分类号： G06F13/14
- IPC分类号： G06F13/14 ; G06F11/08
摘要：
According to an example, a resiliency group for a memory node in a memory network can provide error correction for a memory access in the memory node. The memory access may be received from a main memory controller of a processor connected to the memory network. The memory access may be executed by a memory controller of the memory node.
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