发明公开
EP3012241A1 HIGH-PURITY 1-FLUOROBUTANE AND PLASMA ETCHING METHOD
审中-公开
HOCHREINES 1-FLUOROBUTAN UNDPLASMAÄTZVERFAHREN
- 专利标题： HIGH-PURITY 1-FLUOROBUTANE AND PLASMA ETCHING METHOD
- 专利标题（中）： HOCHREINES 1-FLUOROBUTAN UNDPLASMAÄTZVERFAHREN
-
申请号： EP14813057.8申请日： 2014-06-16
-
公开(公告)号： EP3012241A1公开(公告)日： 2016-04-27
- 发明人: SUGIMOTO, Tatsuya
- 申请人： Zeon Corporation
- 申请人地址： 6-2, Marunouchi 1-chome Chiyoda-ku Tokyo 100-8246 JP
- 专利权人： Zeon Corporation
- 当前专利权人： Zeon Corporation
- 当前专利权人地址： 6-2, Marunouchi 1-chome Chiyoda-ku Tokyo 100-8246 JP
- 代理机构： Beckmann, Claus
- 优先权： JP2013126240 20130617
- 国际公布： WO2014203842 20141224
- 主分类号： C07C19/08
- IPC分类号： C07C19/08 ; C07C17/383 ; C07C17/389 ; H01L21/3065
摘要：
The present invention provides: 1-fluorobutane having a purity of 99.9% by volume or more and a total butene content of 1,000 ppm by volume or less; use of the 1-fluorobutane as a dry etching gas; and a plasma etching method using the 1-fluorobutane as an etching gas. According to the present invention, high-purity 1-fluorobutane which is suitable as a plasma reaction gas for semiconductors, the use of the high-purity 1-fluorobutane as a dry etching gas, and a plasma etching method using the high-purity 1-fluorobutane as an etching gas are provided.
公开/授权文献
- EP3012241B1 PLASMA ETCHING METHOD WITH HIGH-PURITY 1-FLUOROBUTANE 公开/授权日：2018-10-31
信息查询
