A magnetic logic unit (MLU) cell (1) for sensing magnetic fields, comprising: a magnetic tunnel junction (2) including a storage layer (23) having a storage magnetization (230, 234, 235), a sense layer (21) having a sense magnetization; a tunnel barrier layer (22) between the storage layer (23) and the sense layer (21); and a pining layer (24) pinning the storage magnetization (230, 234, 235) at a low threshold temperature and freeing it at a high threshold temperature (T H ); the sense magnetization (210) being freely alignable at the low and high threshold temperatures; the storage layer (23) inducing an exchange bias field (60) magnetically coupling the sense layer (21) such that the sense magnetization (210) tends to be aligned antiparallel or parallel to the storage magnetization (230, 234, 235); the tunnel barrier layer (22) being configured for generating an indirect exchange coupling (70) between the tunnel barrier layer (22) and the sense layer(21) providing an additional exchange bias field (71).