发明公开
EP3099839A1 POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE
审中-公开
FOR USE配方来化学机械抛光方法使用
- 专利标题： POST CHEMICAL MECHANICAL POLISHING FORMULATIONS AND METHOD OF USE
- 专利标题（中）： FOR USE配方来化学机械抛光方法使用
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申请号： EP15743809.4申请日： 2015-01-29
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公开(公告)号： EP3099839A1公开(公告)日： 2016-12-07
- 发明人: SUN, Laisheng , ZHANG, Peng , LIU, Jun , MEDD, Steven , BARNES, Jeffrey, A. , JENQ, Shrane, Ning
- 申请人： Entegris, Inc. , Atmi Taiwan Co., Ltd.
- 申请人地址： 129 Concord Road Billerica, MA 01821 US
- 专利权人： Entegris, Inc.,Atmi Taiwan Co., Ltd.
- 当前专利权人： Entegris, Inc.,Atmi Taiwan Co., Ltd.
- 当前专利权人地址： 129 Concord Road Billerica, MA 01821 US
- 代理机构： ABG Patentes, S.L.
- 优先权： US201461933015P 20140129
- 国际公布： WO2015116818 20150806
- 主分类号： C23G1/14
- IPC分类号： C23G1/14 ; C11D1/62
摘要：
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
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