发明公开
EP3141959A4 LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD
审中-公开
LITHOGRAFISCHES FILMBILDUNGSMATERIAL，ZUSAMMENSETZUNGFÜRLITHOGRAFISCHE FILMBILDUNG，LITHOGRAFISCHER FILM，STRUKTURBILDUNGSVERFAHREN UND REINIGUNGSVERFAHREN
- 专利标题： LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD
- 专利标题（中）： LITHOGRAFISCHES FILMBILDUNGSMATERIAL，ZUSAMMENSETZUNGFÜRLITHOGRAFISCHE FILMBILDUNG，LITHOGRAFISCHER FILM，STRUKTURBILDUNGSVERFAHREN UND REINIGUNGSVERFAHREN
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申请号： EP15788887申请日： 2015-05-08
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公开(公告)号： EP3141959A4公开(公告)日： 2017-09-13
- 发明人: MAKINOSHIMA TAKASHI , ECHIGO MASATOSHI
- 申请人： MITSUBISHI GAS CHEMICAL CO
- 专利权人： MITSUBISHI GAS CHEMICAL CO
- 当前专利权人： MITSUBISHI GAS CHEMICAL CO
- 优先权： JP2014097000 2014-05-08
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; C07D303/18 ; G03F7/26 ; H01L21/027
摘要：
The material for forming a film for lithography according to the present invention contains a compound represented by the following formula (1): wherein, each R° independently represents a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group or a halogen atom, and each p is independently an integer of 0 to 4.
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