发明公开
EP3142143A1 METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR DEVICE
审中-公开
VERFAHREN ZUR HERSTELLUNG EINES LEISTUNGSHALBLEITERBAUELEMENTS
- 专利标题： METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR DEVICE
- 专利标题（中）： VERFAHREN ZUR HERSTELLUNG EINES LEISTUNGSHALBLEITERBAUELEMENTS
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申请号： EP15184786.0申请日： 2015-09-11
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公开(公告)号： EP3142143A1公开(公告)日： 2017-03-15
- 发明人: Vobecky, Jan , Stiegler, Karlheinz , Dobrzynska, Jagoda , Bellini, Marco
- 申请人： ABB Technology AG
- 申请人地址： Affolternstrasse 44 8050 Zürich CH
- 专利权人： ABB Technology AG
- 当前专利权人： ABB Technology AG
- 当前专利权人地址： Affolternstrasse 44 8050 Zürich CH
- 代理机构： ABB Patent Attorneys
- 主分类号： H01L21/329
- IPC分类号： H01L21/329 ; H01L29/861 ; H01L29/06 ; B23K26/364 ; H01L21/784
摘要：
A method for manufacturing a power semiconductor device having an active region and a termination region surrounding the active region is provided. For the creation of a junction termination in the termination region the following steps are performed:
(a) providing a substrate (1) of a first conductivity type having a first side (10) and a second side (15),
(b) applying a masking layer (2, 20) on the first and on the second side (10, 15),
(c) then creating a first recess (3) on the first side, and
(d) creating a second recess (4) on the second side (15), the minimum substrate thickness (12) between the first recess (3) and the second recess (4) being thick enough to provide mechanical stability for the following manufacturing steps,
(e) after step (d) applying a first dopant (50, 550) of a second conductivity type on the first side and on the second side (10, 15), wherein the first dopant is absorbed in the masking layer (2, 20),
(f) creating a first layer (5) by driving-in the first dopant in the first recess (3) and a second layer (55) by driving-in the first dopant in the second recess (4), wherein the first layer (5) and the second layer (55) form a continuous layer between the first recess (3) and the second recess (4) and
wherein in step (d) the minimum substrate thickness (12) is so small that in step (f) the first layer (5) and the second layer (55) can form the continuous layer.
(a) providing a substrate (1) of a first conductivity type having a first side (10) and a second side (15),
(b) applying a masking layer (2, 20) on the first and on the second side (10, 15),
(c) then creating a first recess (3) on the first side, and
(d) creating a second recess (4) on the second side (15), the minimum substrate thickness (12) between the first recess (3) and the second recess (4) being thick enough to provide mechanical stability for the following manufacturing steps,
(e) after step (d) applying a first dopant (50, 550) of a second conductivity type on the first side and on the second side (10, 15), wherein the first dopant is absorbed in the masking layer (2, 20),
(f) creating a first layer (5) by driving-in the first dopant in the first recess (3) and a second layer (55) by driving-in the first dopant in the second recess (4), wherein the first layer (5) and the second layer (55) form a continuous layer between the first recess (3) and the second recess (4) and
wherein in step (d) the minimum substrate thickness (12) is so small that in step (f) the first layer (5) and the second layer (55) can form the continuous layer.
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