发明公开
EP3149764A1 PROCÉDÉ DE RÉALISATION DE MOTIFS PAR AUTO-ASSEMBLAGE DE COPOLYMERES A BLOCS
审中-公开
MUSTERUNGSVERFAHREN MITTELS SELBSTANORDNUNG AUS BLOCKCOPOLYMEREN
- 专利标题: PROCÉDÉ DE RÉALISATION DE MOTIFS PAR AUTO-ASSEMBLAGE DE COPOLYMERES A BLOCS
- 专利标题(英): Patterning method using self-assembly of block copolymers
- 专利标题(中): MUSTERUNGSVERFAHREN MITTELS SELBSTANORDNUNG AUS BLOCKCOPOLYMEREN
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申请号: EP15732320.5申请日: 2015-05-21
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公开(公告)号: EP3149764A1公开(公告)日: 2017-04-05
- 发明人: BELLEDENT, Jérôme , PIMENTA BARROS, Patricia
- 申请人: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 申请人地址: 25, Rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 专利权人: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- 当前专利权人地址: 25, Rue Leblanc Bâtiment "Le Ponant D" 75015 Paris FR
- 代理机构: Cabinet Camus Lebkiri
- 优先权: FR1454712 20140526
- 国际公布: WO2015181474 20151203
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; H01L21/768 ; H01L21/311
摘要:
The invention relates to a method for patterning the surface of a substrate by self-assembly of block copolymers which includes the following steps: forming a first mask (20) defining at least two areas to be plated (21a, 21c) on the surface of the substrate; forming an assembly guide (23a) above the first mask (20), such that the assembly guide defines a surface covering two contact areas (22a, 22c) belonging respectively to the two areas to be plated (21a, 21c); depositing a block-copolymer layer on said surface; reorganising the block-copolymer layer; removing one of the phases (24) of the reorganised block-copolymer layer, resulting in a plurality of holes extending in the block-copolymer layer above the two contact areas (22a, 22c) and a portion of the first mask (20) arranged between the two contact areas (22a, 22c); widening the holes of the block-copolymer layer by etching, until a continuous trench (25a) is formed above the two contact areas (22a, 22c) and said portion of the first mask (20); transferring the continuous trench (25a) through the first mask (20) onto the surface of the substrate such as to form patterns that correspond to the contact areas (22a, 22c).
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