本发明涉及一种制造方法，该制造方法包括以下步骤：a）提供包括第一所谓正面（11）的第一衬底，所述正面由III-V族半导体制成，b）提供 第二衬底，c）通过进行自由基氧化在所述第一衬底的所述前表面上形成自由基氧化物层，d）通过直接键合步骤将所述第一衬底和所述第二衬底组装到 形成包括介于第一基板和第二基板之间的基氧化物层的组件，e）进行旨在加强步骤d）中形成的组件的界面的热处理，并且至少部分地 ，自由基氧化层。

The invention relates to a manufacturing method comprising the steps of:
a) providing a first substrate comprising a first front face said face (11), said front panel being made of a semiconductor of III-V type,
b) providing a second substrate,
c) forming a radical oxide layer on said front face, of the first substrate by performing a radical oxidation,
d) assembling, by a direct bonding step, the first substrate and the second substrate so as to form an assembly comprising the radical oxide layer interposed between the first and second substrates,
e) performing a heat treatment to strengthen the interface assembly formed in step d), and to remove, at least partially, the radical oxide layer.