发明公开
EP3167491A1 COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD OF COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL
审中-公开
光伏复合半导体TAIC细胞与方法的复合半导体光电-CELL TAIC的
- 专利标题： COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD OF COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL
- 专利标题（中）： 光伏复合半导体TAIC细胞与方法的复合半导体光电-CELL TAIC的
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申请号： EP15819204.7申请日： 2015-07-08
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公开(公告)号： EP3167491A1公开(公告)日： 2017-05-17
- 发明人: SATO, Shunichi
- 申请人： Ricoh Company, Ltd.
- 申请人地址： 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo 143-8555 JP
- 专利权人： Ricoh Company, Ltd.
- 当前专利权人： Ricoh Company, Ltd.
- 当前专利权人地址： 3-6, Nakamagome 1-chome, Ohta-ku, Tokyo 143-8555 JP
- 代理机构： Leeming, John Gerard
- 优先权： JP2014142826 20140711; JP2015122272 20150617
- 国际公布： WO2016006247 20160114
- 主分类号： H01L31/0687
- IPC分类号： H01L31/0687 ; H01L31/0693
摘要：
A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell made of a first compound-semiconductor material which lattice matches with GaAs or Ge; a first tunnel junction layer arranged on a deep side farther than the first photoelectric conversion cell in a light incident direction, and including a first p-type (Al
x1 Ga
1-x1 )
y1 In
1-y1 As (0≦x1 x2 Ga
1-x2 )
y2 In
1-y2 P (0≦x2 x2 Ga
1-x2 )
y2 In
1-y2 P layer is greater than a lattice constant of the first photoelectric conversion cell.
x1 Ga
1-x1 )
y1 In
1-y1 As (0≦x1 x2 Ga
1-x2 )
y2 In
1-y2 P (0≦x2 x2 Ga
1-x2 )
y2 In
1-y2 P layer is greater than a lattice constant of the first photoelectric conversion cell.
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